Professor Graham Rees BA (Oxon), PhD, MInstP

Graham has over 20 years’ experience in the Electronics Industry, working for Plessey and then GEC at their Device Research laboratories at Caswell, where he was leader of the Theoretical Technology Group. The Group’s broad remit was to assist in the understanding and design of leading edge devices and subsystems over the full spectrum of the laboratory’s activities. Graham’s experience spans a broad range of GaAs and other III-V semiconductor devices associated with microwave and optoelectronic functions.

He moved to Sheffield University’s Department of Electronic Engineering in 1991, a department with a 5* research rating, of which he was head from 2001 – 2002. Graham has pursued many research interests in the III-V area and most recently he has been investigating novel effects in submicron Avalanche Photodiodes. His Group at Sheffield now arguably leads the world in its understanding of the associated performance improvements, whose benefits have transformed the future of these devices.

Graham has consulted with a number of III-V research laboratories in the UK, is a member of the EPSRC Functional Materials College, a scientific advisor to Oxford University Press and has been an honorary editor of a number of research journals. He also referees scientific papers widely for a number of UK, European and US journals and assesses research proposals for both the UK and the EU. These activities give him a broad and up-to-date perspective of leading edge work in III-V materials and devices.